Analytical and Numerical Studies of Defect Formation in SiC
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Описание:
Improvement of PVT (Physical Vapor Transport) grown SiC (Silicon Carbide) structural quality is crucial for the wide commercialization of SiC electronic devices that feature superior characteristics for power conditioning and control. This is why, this publication is devoted to investigation and development of comprehensive models that can help to explain, understand and, then, eliminate formation of various defects in SiC during PVT growth.Похожие книги
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