Exploration of the Potential Defects in GaN HEMTs
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Описание:
What happens inside a GaN HEMT during device operations? Usually,destructive measurements are required to analyze the defect and the carrier trapping - which are the two biggest reliabilty issues in GaN electronics.The novel noninvasive optical characterization techniques provided by this book can visualize the potential defect and the trapping region inside an operating GaN HEMT. The techniques show promise for screening the device failure.Похожие книги
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