Insulated Gate Bipolar Transistor IGBT Theory and Design

Insulated Gate Bipolar Transistor IGBT Theory and Design
Автор
 
Год
 
Страниц
 
577
ISBN
 
ISBN10:0201362996
Издатель
 
Wiley-IEEE Press

Описание:

A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT.
* All-in-one resource
* Explains the fundamentals of MOS and bipolar physics.
* Covers IGBT operation, device and process design, power modules, and new IGBT structures.

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