Nanometer-Scale Resistivity of Copper Films and Interconnects
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Описание:
A highly versatile simulation program is developed and used to examine how the resistivity of thin metal films and lines increases as their dimensions approach and become smaller than the mean free path of electrons in metals such as copper (size effect). The simulation program: 1) provides a more accurate calculation of surface scattering effects than that obtained from the usual formulation of Fuchs’ theory, 2) calculates grain-boundary effects that are consistent with the theory of Mayadas and Shatzkes, 3) includes the effects of surface and grain-boundary scattering either separately or together, and 4) simulates the effect on resistivity if a surface of a film or line has a different value for the scattering parameter. The increase in resistivity with decreasing thickness of thin, evaporated copper films (approximately 10 nm to 150 nm thick) was determined from sheet resistanceand film thickness measurements. Good agreement between the experimental results with those of the...Похожие книги
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