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Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Mercury Cadmium Telluride Автор: Peter Capper Год: 2011 |
Materials Fundamentals of Molecular Beam Epitaxy Автор: Jeffrey Y. Tsao Год: 2010 |
Crystal Growth - From Fundamentals to Technology Автор: Muller G. (ed.), Metois J.-J. (ed.), Rudolph P. (ed.) Год: 2004 |
Heteroepitaxy of Wide Band Gap Semiconductors on Silicon Substrates Автор: Jianwei Wan Год: 2010 |
Properties of Porous Silicon Автор: Canham L.(ed.) Год: 1997 |